Electronic Transport in a Three-dimensional Network of 1-D Bismuth
Quantum Wires

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1 Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires
T. E. Huber, Howard University, Washington, D.C. 20059
and
M. J. Graf, Department of Physics, Boston College, Chestnut Hill, MA 02467
The resistance R of a high density network of 6 nm diameter Bi wires in porous Vycor
glass is studied in order to observe its expected semiconductor behavior. R increases from 300 K
down to 0.3 K. Below 4 K, where R varies approximately as ln(1/T), the order-of-magnitude of
the resistance rise, as well as the behavior of the magnetoresistance are consistent with
localization and electron-electron interaction theories of a one-dimensional disordered conductor
in the presence of strong spin-orbit scattering. We show that this behaviour and the surface-
enhanced carrier density may mask the proposed semimetal-to-semiconductor transition for
quantum Bi wires.

2
I. INTRODUCTION
The latest experimental advances in preparation of nanowires have given give rise to both
new applications and fundamental science. One of the most exciting prospects is that of an ideal
quantum wire of diameter d less than the Fermi wavelength l F . Profound changes in the density
of state (DOS) and deep modifications of the transport properties are expected, as seen, for
example in single wall carbon nanotubes. Enormous effort has been applied to the study of
carbon nanotubes since its discovery in 1991 with considerable success.1 Comparatively little
attention has been given to the semimetal Bi, that has the smallest effective mass among all
known materials. Due to this property, quantum confinement in Bi can be observed in nanowires
of larger diameter than those of any other material. Here we present a study of the electronic
transport in a network of Bi wires of 6 nm- diameter, much smaller than the bulk electronic
Fermi wavelength l F of 25 nm, and we are able to confirm some theoretical predictions.
The quantum-confinement driven semimetal-to semiconductor (SMSC) transition has
been studied recently in carbon nanotubes2 Bulk Bi is also a semimetal whose three-conduction
band minima at the L-points overlap the valence-band maximum at the T-point by about 40 meV
and a SMSC transition has also been predicted for Bi. Sandomirskii3 pointed out that as a result
of the electrons'zero-point energy, the band overlap decreases for thin films and if the film is thin
enough a gap is formed and the semimetal turns into a semiconductor. The critical thickness tc
for this transition for Bi is expected to be 30 nm. Despite many transport and optical
investigations of quantum phenomena in thin films the experimental evidence is not conclusive.
These films' resistivity is weakly T-dependent, unlike a typical intrinsic semiconductor that
exhibits a thermally activated behavior. This has been interpreted in terms of a very short
effective mean free path l ~ t, and a surface-enhanced carrier density.4,5 Since the majority carrier
concentration then becomes insensitive to the introduction of an energy gap one should expect no

3 abrupt changes at the transition point. The alternative view, that the SMSC does not occur
because the boundary condition of vanishing electron wavefunction is spoiled by disorder, also
has proponents. Experiments, however, are lacking. Gurvitch7 and Brandt et al8 have shown that
200 nm diameter Bi wires display metallic behavior down to 2 K and exhibit quantum size
effects. More recently, Liu, Chien and Searson presented electrical transport measurements on
thick wires (d > 200 nm>>dc , l F). 9 There is renewed interest in the electronic properties of
quantum wires, of diameter d where d< l F, and where l F is the Fermi wavelength equal to 25
nm for the electrons (7 nm for holes) in bulk Bi, because theory indicates that they may have
outstanding thermoelectric properties.10,11 Recently, Zhang, Sun, Dresselhaus, Ying and
Heremans12 reported a reversal of the magnetoresistance temperature dependence for Bi wires
with 65 nm diameter relative to those with 110 nm diameter. The phenomenon is due to the
quantization of the transverse momentum of the carriers which results in the SMSC transition. A
nanowire of diameter d<<dc, the critical diameter, is a simpler case. However, to our knowledge
the electronic transport of a wire of d<dc,l F , has not been addressed experimentally. One
approach is that of confining Bi in a microporous solid insulator. In this study we take such an
approach and we use porous Vycor glass (PVG) because it is a unique prototype monolithic
nanoscale porous material. The use of PVG as a confining host has been particularly fruitful, for
example, in studying the properties of superfluid helium,13 in a restricted geometry. The
characterization of PVG, particularly the surface, is intrinsically difficult but the basic network
structure is reasonable well known from adsorption isotherm and small-angle X-ray scattering
studies.14 Many aspects of the network structure have been clarified by studying the temperature
dependence of the the critical field of In injected in PVG. 15
Confinement introduces scattering and it is known that electronic transport in disordered
conductors can be ballistic, diffusive or in a localized regime. Relevant lengthscales set by are
the carriers' elastic le and inelastic pathlength l f . In disordered systems l f can exceed le by
several orders of magnitude. The coherent superposition of the scattered electron wave results in

4 back-scattering. This causes a weak localization correction to the classical resistance which is
composed of the Drude and electron-phonon contributions. Such corrections appear in many
metallic systems of restricted geometry (wires and films) which show dr /dT <0 at low enough
temperatures. The resistance rise can be expressed as d R/R ~ L /L, where L is the length of a
conductor having the characteristic quantum resistance h/(2e2) = 12.9 k W . L has been derived in
the case of localization,16 where L =l f
for H=0, and also for electron-electron interaction17
theories. The application of these ideas to Bi18 two-dimensional and three-dimensional films is
well known. Bi, being a heavier metal, has a large spin-orbit interaction, characterized by a
lengthscale lso, which can change the character of the low temperature correction to one of "
antilocalization" (dr /dT >0). We show for the first time that 6 nm-diameter Bi wires exhibit
only weak localization and only at the lowest temperatures (T<2 K) .
Progress in the study of true one-dimensional quantum wire systems has been slow due to
the difficulty of fabricating such materials. On the other hand, the quasi-1D case has been around
for 20 years and is well within the realm of microelectronic technology. Mohanty, Jariwala, and
Webb19 have reviewed many studies of this type. All papers cited consider the quasi-1D case l F
<W<l j
where W is the wire width. A more recent case is presented by Khavin et al.20 In this
case l F = 10 nm and W is 50 nm. Also, a common technique of confining the two-dimensional
electron gas is to pattern a gate. Applying a negative voltage to the gate with a split gate
geometry depletes the electron gas beneath it results of a narrow conducting channel; the
conducting width can be tuned down to zero by making the gate voltage more negative.
However, the actual induced potential is not known directly, and theoretical studies indicate that
it has a saddle shape. In the constriction, electrons are confined in the lateral direction and also
retarded by the presence of a potential barrier in the wire direction.21 As we will show, our
experiment presents the (real) 1D case, a network of wires of diameter d< l F <lj . In our
experiment the confinement is well defined by the wire geometry and the network structure. The
physics underlying the two experimental cases should not be confused.

5 The plan of the paper is as follows. In Sec. II we discuss briefly the sample preparation
method, sample characterization and other experimental issues. In Sec. III we analyze the
experimental results.
II. SAMPLE PREPARATION AND CHARACTERIZATION
The samples are prepared by melting pure Bi (99.9999 %) and injecting it into porous
Vycor glass (PVG) by applying hydrostatic pressures of 5 kilobars. We have used this technique
previously for In and other materials.15 The PVG used has an average pore diameter d of 6 nm.
The interconnected network of pores occupies approximately 30% of the total volume. The shiny
black samples have approximately 80 % of the pore volume filled with Bi. While the silica
backbone structure is complex and interconnected, one can consider it being made up of silica
particles of a characteristic size of 26 nm, and this structure is unchanged by the injection
process.22 X-ray diffraction (XRD) from the Bi-PVG composite shows that the Bi retains its
rhombohedral (trigonal) structure but with shrinkage of its unit cell. For example, the (102)
planes in the hexagonal indexing system, that are separated by 0.328 nm in bulk Bi are separated
by 0.320 nm in the composite. This corresponds to a lattice linear contraction of approximately
2.5%. This is likely a result of the injection process since Bi expands on solidification by 3.3 %
An estimate for the average Bi crystallite size D can be obtained from the widths of the XRD
peaks through Scherrer's equation.23 A value D= 9 nm was determined from the .017 FWHM of
the peak corresponding to the (102) planes, comparable to the PVG average pore diameter d=6
nm. A scanning electron micrograph image of the composite is shown in Fig. 1. The Bi in the
composite was exposed by etching with HF. We have observed that these samples are not very
stable and that samples larger than a few millimeters crumble when subject to stress. Still, we
were able to select samples that were robust and therefore suitable for our experiments.

6 The sample resistance was measured using four terminal d.c. and a.c. (f = 100 Hz)
techniques. Electrical contact was made via brass wires attached with silver epoxy to gold pads
deposited in a vacuum evaporator. At 300 K the resistivity of the composite is roughly 21
m W -cm, and cooling to 4 K increases this to 27 m W -cm. The ratio of the room temperature
resistivity of the composite to that of the bulk is r = r Bi-PVG/r bulk = 175. A simplified structural
model of the composite is that of a 3D simple-cubic lattice of 6-nm diameter nanowires where
the periodicity of the network lattice is s ~ 26 nm, roughly the size of the silica particles. A
value of r ~ 12 is estimated by considering that Bi occupies 80% of the pore volume and that
about 1/3 of the metal wires are oriented along the current flow. For example, r is 20 for In-filled
Vycor at room temperature, where the electronic mean free path le << d and surface scattering is
not very important.15 Therefore, r for Bi-PVG is roughly one order of magnitude larger than
expected from structural considerations, indicating that the resistivity is much larger than the
bulk at room temperature (RT). Accordingly, the RT resistivity, r Bi, of Bi in the nanowires is
estimated to be 1.8 m W -cm. We will show later that this value is consistent with results obtained
for thin Bi films
It is obvious that Bi is subject to large stresses in the pores of PVG and that these might
induce a phase change. A hydrostatic pressure of 20 kBar induces the transition from semimetal
Bi(I) to the metallic Bi(II). We can calculate the stresses present in our samples in the following
manner: from a linear contraction of 2.5 % in the [102] direction and taking Young's modulus to
be 5x1011 dyn/cm2,24 we find an stress of 1.3x109 dy/cm2 or 13 kBar. This pressure is insufficient
to promote the Bi(I)-(II) transition.25 Also, the effect of compression in thick (500 nm) Bi films
has been investigated and is known that a pressure of 10 kBar increases the film resistivity by
roughly 7%. Therefore, we believe the stresses in our samples are not directly relevant to the
high resistivity of Bi in the composite.

7 III. RESULTS
The temperature-dependent resistivity of Bi-PVG is shown in Fig. 2. The inset displays
the resistivity over a wide temperature range exhibiting a negative temperature coefficient. In
comparison, the bulk Bi resistivity obeys a T2 law at low temperatures and is roughly
proportional to T for T > 100 K.26 The expected semiconductor activation energy can be obtained
as follows. The presumed thin film's gap dependence was found theoretically2 and
experimentally4 to obey roughly D = 40 meV ((tc/t) 2-1). Assuming the behavior of a nanowire of
d= 6 nm to be that of a thin film of the same thickness we obtain D = 1 eV. Clearly the Bi wire
network fails to display the thermally activated behavior expected for an intrinsic semiconductor
with such a large band gap. This can indeed be understood in terms of a surface-enhanced carrier
density. In thin films,3,4 it was found that p=pi+ps/t where pi is the effective carrier intrinsic
concentration resulting from band overlap (pi = 2.5x10 17/cm3 for thick films) and ps = 3x10
12/cm2
is the effective density per unit film area. At low temperatures (kB T<D ) the majority carrier
concentration becomes temperature independent. For our nanowires, considering the number of
surface states is proportional to the surface area, the effective bulk concentration can be
estimated to be 5x1018/cm3. This concentration is consistent with our results. From r Bi=(nqm ) -1
we obtain m =103 cm3 /(sec volt), in good agreement with thin Bi film results for t = 20 nm. More
study is needed to understand this issue and, in particular, the impact of the surface states on the
expected thermoelectric properties.7,8 In order to exhibit the intrinsic regime, the Bi samples
should have lower net doping levels, which may be obtained by doping or surface modification.
Due to the close analogy between the phenomena exhibited by Bi films and nanowires with

8 regard to the temperature dependence of the resistivity we expect that the two subjects will
develop in close association.
Superimposed on the slowly rising r (T) as T decreases, a much sharper temperature rise
takes place at temperatures below 4K. This is the main focus of this paper and is shown in more
detail in Fig. 3. The variation is seen to be approximately logarithmic although the data is also
roughly consistent with a T-1/2 dependence. This particular temperature dependence is indicative
of one-dimensional weak localization in wires. It is useful to compare the order-of-magnitude of
our results with those of other workers. Williams and Giordano27 studied Au wires of 8 nm
diameter and found that the resistance fractional rise [(R(1.5 K)/R(4 K))-1] is 1.5x10-2 and had a
T1/2 temperature dependence. If this number is multiplied by the factor 64/36 to take into account
the smaller diameter of our wires, the extrapolated temperature rise is 2.6x10-2, in numerical
agreement with our result which is 1.7x10-2. This suggests that our composite sample closely
resembles a network of nearly one-dimensional wires. It is interesting that if a simple-cubic
three-dimensional Bravais lattice of wires is assumed, the resistance of each 30 nm long section
of 6 nm diameter wire is 9 kW at 4 K. This estimate is consistent with the characteristic quantum
resistance h/(2e2) ~12.9 K W for which weak localization effects are expected to be important.16
Alternatively, we can look at the low temperature anomaly as a manifestation of disorder in a 3D
sample. The Yoffe-Regel-Mott criterion28 for localization in 3D indicates that the Drude theory
is inappropriate for samples with r > 2 m W l F(in nm). Since the Fermi wavelength l F can be
estimated to be 25 nm for electrons and 7 nm for holes, our sample resistivity of 21 mW .cm is
clearly problematic.
Williams et al27 and also White et al29 observed that their metallic wires exhibit
negligible magnetoresistance (MR). In contrast, our samples show a sizable one (Fig. 4). It
should be noted that the MR is positive and that it increases for decreasing temperatures. The
transverse30 MR of the Bi-PVG is quite different from that of the bulk Bi which exhibits a B2

9 dependence at low magnetic fields and a B1.6 dependence31 in the high magnetic field range. The
behavior shown by Bi-PVG is reminiscent to that of thin Bi films where the Coulomb anomaly
and the weak localization anomaly occur simultaneously.4,18
The MR of quasi-1D wires is well studied. Altshuler and Aronov32 calculated the
localization contribution to the magnetoresistance of wires by treating the magnetic field as a
perturbation. This approximation actually improves for decreasing wire diameter. Taking spin
orbit effects into account33 D R(T,H) µ 3(1/l f
2 + 1/lso 2 +1/lH
2)-1/2 -(1/l f
2 +1/lH 2)-1/2, where lH is the
magnetic field dephasing length which is roughly 1.73 f 0/H and f 0 = 2p hc/2e. The best fit of the
MR data at 2.3 K is shown in Fig. 4., using l f
= 80 nm and lso = 30 nm. In comparison, l f is 100
nm for thin Bi films at the same temperature.18 These parameters satisfy the condition lso ,l f >>
d, where d is the wire diameter. However, since our wires are short and lso,l f >> s = 26 nm, the
magnetoresistance is also modulated by the mesoscopic network structure. For example,
quantum interference in the electronic path around a silica particle should lead to a
magnetoresistance oscillation with a period D H = 4 f 0/( p s 2) ~ 3T. The effect of the network in
shaping the magnetoresistance, the relative orientation between wire and magnetic field, as well
as the evaluation of the various phase-breaking mechanisms34 is outside the scope of this paper.
It should be noted that weak localization effects were not considered in the interpretation of their
Bi nanowire magnetoresistance measurements by the previous workers.7-11 Because these studies
were for larger diameter wires at higher temperatures we can infer that weak localization effects
appear in Bi at low temperatures and only for very small diameters wires.
We now discuss some structural considerations. We have already noted that large Bi-
PVG samples are not stable and crumble under severe stress. The cracks fill with bulk Bi. We
have also observed that samples that appear to be whole will undergo small changes from one
experimental run to another. Upon aging of several months the composite resistance becomes
slightly smaller, i.e, the resistance at 4 K changes from 26 mW .cm to 25.2 m W cm. This decrease

10
is accompanied by a shoulder at 2 K in the temperature dependence of the resistivity. The I(V) is
non-linear near the bump as indicated by different R(T) readings under d.c. and a.c. excitation. In
comparison, the low temperature (T ~ 4 K) I=I(V) curve of "new" samples is linear up to a
current density of 0.6 A/cm2. This contrast is consistent with the expectation that the sample is
becoming more "granular", and consisting of thinner wires, upon aging. This is expected to be a
result of aging since such changes would minimize the surface energy of the composite. We
have observed that, upon aging, the magnetoresistance becomes larger. For example, D R/R is
0.05 at 3 T and 0.35 K, while it is 0.02 of the "new" samples. This is consistent with weak
localization since thinning down of wires would tend to increase the magnetoresistance.33 It is
observed that the room temperature resistance changes very little in this process, actually
decreasing for older samples. In a first approximation, the shortened mean free path (le ~ d) in
smaller wires is compensated by an increased number of majority carriers (n ~ d-1).
Weitzel and Micklitz35 have studied granular systems built of well-defined rhombohedral
Bi nanoclusters (d~4 nm) in a variety of matrices (Ge, O2, H2, and Xe). They found that many of
these composites exhibit superconductivity at low temperatures (Tc~4 K). This behavior
contrasts with the localization behavior of our sample. However, the onset of superconductivity
may be related to the bump observed by us at 2 K in "aged" or granular samples.
IV. SUMMARY
We present results of an experimental study of the temperature and magnetic-field
dependence of the resistivity of a network of 6 nm diameter Bi wires where d<<l F. The wire
diameter, 6 nm, is much smaller than the critical diameter for the SMSC transition estimated to
be 30 nm. However, we do not observe the expected temperature-activated behavior typical of an

11
intrinsic semiconductor in the temperature range investigated. This can be interpreted in terms of
surface-enhanced carriers. Also, we do not observe strong localization and the composite is a
basically a good conductor. The observed temperature rise at low temperature and associated
magnetoresistance are interpreted in terms of weak localization effects due to disorder. The 80
nm dephasing length scale as inferred from the data is somewhat larger than the network
periodicity and the wirelength s and, therefore, the magnetoresistance could be modulated by the
network mesoscopic structure. Undoubtedly, further study of long, straight nanowires will help
understand better the role of localization in electronic transport in networks of 1-D wires; we are
currently undertaking such studies, utilizing parallel nanochannels insulating host materials.36
The work of T.E.H. was supported by the Army Research Office through DAA H04-95-
1-0117 and by the National Science Foundation through DMR-9632819. M.J.G. is supported in
part through Research Corporation Grant RA0246.

12
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Abrahams, and D.S. Fisher, Phys. Rev. B22, 3519 (1980).
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Rev. B22, 5142 (1980).

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18. Y.F. Komnic et al, Sov. J. Low. Temp. Phys. 7, 656 (1982). Y.F. Kommik et al, Solid
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D. Turnbull (Academic Press, New York, 1991)
22. T.E. Huber, P.W. Schmidt, J.S. Lin, and C.A. Huber, to be published.
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30. Although the macroscopic current is transverse to the magnetic field, the nanowires are
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36. T.E. Huber, M.J. Graf, and C.A. Foss, in Thermoelectric Materials- The Next Generation
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Pittsburg, 1999), p.227.

15
FIGURE CAPTIONS
Fig. 1. Scanning electron micrograph of the Bi-PVG composite. Dark
areas correspond to silica.
Fig. 2. The resistivity from 0.3 K to room temperature.
Fig. 3. Low temperature resistivity of Bi-injected PVG.
Fig. 4 Magnetoresistance of Bi-injected PVG at 0.3 K. The solid line is a fit
to the theory of Ref. 33.

16
Fig. 1

17
Fig. 2
21
23
25
27
29
0 100 200 300
r
( m
W
-c m
)
Temperature (K)

18
Fig. 3
27.0
27.4
27.8
28.2
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
r
( m
W
-c m
)
ln T

19
Fig. 4