Spin and population dynamics of photoexcited carriers in GaAs/AlGaAs and InGaAs/InP quantum wells is investigated from 5K to 300K, revealing transition between excitonic and free carrier spin-relaxation at intermediate temperatures. Localisation is found to prolong spin relaxation of excitons by two orders of magnitude.
Malinowski, A., Marsden, P.A., Britton, R.S., Puech, K., Tropper, A.C. and Harley, R.T. (2000) Excitonic vs free-carrier spin relaxation in I-V quantum wells. In, International Conference on the Physics of Semiconductors, Osaka, Japan, Sep 2000.
